IPB60R099CPA coolmos tm power transistor features ? worldwide best rds,on in to263 ? ultra low gate charge ? extreme dv/dt rated ? high peak current capability ? automotive aec q101 qualified ? green package (rohs compliant) ? qualified according to jedec 1) for target applications coolmos cpa is specially designed for: ? dc/dc converters for automotive applications maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =11 a, v dd =50 v 800 mj avalanche energy, repetitive t ar 2),3) e ar i d =11 a, v dd =50 v avalanche current, repetitive t ar 2),3) i ar a mosfet d v /d t ruggedness d v /d t v ds =0...480 v v/ns gate source voltage v gs static v power dissipation p tot t c =25 c w operating temperature t j c storage temperature t stg -40 ... 150 value 31 19 93 255 -40 ... 150 1.2 11 50 20 v ds 600 v r ds(on),max 0.105 q g,typ 60 nc product summary type package marking IPB60R099CPA pg-to263-3-2 6r099a pg-to263-3-2 rev. 2.0 page 1 2007-08-10
IPB60R099CPA maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous diode forward current i s a diode pulse current 2) i s,pulse 93 reverse diode d v /d t 4) d v /d t 15 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.5 k/w r thja smd version, device on pcb, minimal footprint --62 smd version, device on pcb, 6 cm 2 cooling area 5) -35- soldering temperature, reflow soldering t sold msl1, reflow acc. to ipc-jedec j-std- 020c - - 245 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v gate threshold voltage v gs(th) v ds = v gs , i d =1.2 ma 2.5 3 3.5 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c --5a gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =18 a, t j =25 c - 0.09 0.105 v gs =10 v, i d =18 a, t j =150 c - 0.24 - gate resistance r g f =1 mhz, open drain - 1.3 - values thermal resistance, junction - ambient value t c =25 c 18 rev. 2.0 page 2 2007-08-10
IPB60R099CPA parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2800 - pf output capacitance c oss - 130 - effective output capacitance, energy related 6) c o(er) - 130 - effective output capacitance, time related 7) c o(tr) - 340 - turn-on delay time t d(on) -10-ns rise time t r -5- turn-off delay time t d(off) -60- fall time t f -5- gate charge characteristics gate to source charge q gs -14-nc gate to drain charge q gd -20- gate charge total q g -6080 gate plateau voltage v plateau - 5.0 - v reverse diode diode forward voltage v sd v gs =0 v, i f =18 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 450 - ns reverse recovery charge q rr -12-c peak reverse recovery current i rrm -70-a 1) j-std20 and jesd22 2) pulse width t p limited by t j,max values v gs =0 v, v ds =100 v, f =1 mhz v dd =400 v, v gs =10 v, i d =18 a, r g =3.3 v dd =400 v, i d =18 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v 7) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 4) i sd <= i d , d i /d t <=100a/s, v dclink = 400v, v peak < v (br)dss , t j < t jmax , identical low side and high side switch v r =400 v, i f = i s , d i f /d t =100 a/s 5) device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air 6) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. 3) repetitive avalanche causes additional power losses that can be calculated as p av = e a r * f. rev. 2.0 page 3 2007-08-10
IPB60R099CPA 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics z thjc =f( t p ) i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 100 200 300 0 40 80 120 160 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 v ds [v] i d [a] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 15 30 45 60 75 90 105 120 0 5 10 15 20 v ds [v] i d [a] limited by on-state resistance rev. 2.0 page 4 2007-08-10
IPB60R099CPA 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =18 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j typ 98 % 0 0.05 0.1 0.15 0.2 0.25 0.3 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ] c 25 c 150 0 40 80 120 160 0246810 v gs [v] i d [a] 4.5 v 5 v 5.5 v 6 v 7 v 8 v 10 v 20 v 0 10 20 30 40 50 0 5 10 15 20 v ds [v] i d [a] 5 v 5.5 v 6 v 6.5 v 7 v 20 v 0 0.1 0.2 0.3 0.4 0.5 0 1020304050 i d [a] r ds(on) [ ] rev. 2.0 page 5 2007-08-10
IPB60R099CPA 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =18 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche energy 12 drain-source breakdown voltage e as =f( t j ); i d =11 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] 120 v 400 v 0 2 4 6 8 10 0 102030405060 q gate [nc] v gs [v] 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0 200 400 600 800 25 75 125 175 t j [c] e as [mj] rev. 2.0 page 6 2007-08-10
IPB60R099CPA 13 typ. capacitances 14 typ. coss stored energy c =f( v ds ); v gs =0 v; f =1 mhz e oss = f (v ds ) 0 4 8 12 16 20 0 100 200 300 400 500 600 v ds [v] e oss [j] ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [pf] rev. 2.0 page 7 2007-08-10
IPB60R099CPA definition of diode switching characteristics rev. 2.0 page 8 2007-08-10
IPB60R099CPA pg-to263-3-2: outlines soldering temperature, reflow soldering rev. 2.0 page 9 2007-08-10
IPB60R099CPA published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. a ll rights reserved. legal disclaimer the information given in this document shall in no event be reg arded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information regardi ng the application of the device, infineon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation warranties of non?infringement of intellectu al property rights of any third party. information for further information on technology, delivery terms and condi tions and prices please contact your nearest infineon technologies office (www.infineon .com). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon t echnologies office. infineon technologies components may only be used in life-suppo rt devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.0 page 10 2007-08-10
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